Optimizing High Power GaN Device Performance With Eutectic Die Attach
StratEdge has introduced a line of packages for the extreme demands of GaN devices and developed a eutectic die attach process that produces extremely thin, low-void bond lines between the device and package heat sink. We also provide the same service for die-on-tab. Click to learn more about the 6 micron thick, AuSn die attach process that produces >96% coverage.